Evidence / park2024pjbit
A 0.65-pJ/bit 3.6-TB/s/mm I/O Interface with XTalk Minimizing Affine Signaling for Next-Generation HBM with High Interconnect Density
Park, Hyunjun, Shin, Ji-Won, Kim, Hanseok, Kim, Ji‐Hee, Shin, Haengbeom, Kim, Tae‐Hoon, Park, Jung-Hun, Choi, Woo‐Seok
arXiv, 2024
reportedmachine checkedpreprint
Fabricated prototype in 28 nm CMOS; the figure is the I/O interface only (die-to-die over a silicon interposer), not the DRAM array energy.
Findings
Energy per bit moved: 6.5 × 10⁻¹³ J
Die-to-die I/O transceiver over silicon interposer or similar high-density interconnect, 28 nm CMOS prototype, edge density 3.6 TB/s/mm. 0.65 pJ/b converted to joules.
the prototype XMAS transceiver achieves an edge density of 3.6TB/s/mm and an energy efficiency of 0.65pJ/b
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Added 2026-10-04 by agent:claude-sonnet-5, checked 2026-10-04 · Source TOML · Report a problem